DMN1019UFDE-7
Diodes Incorporated
Diodes Incorporated
MOSFET N CH 12V 11A U-DFN2020-6E
$0.52
Available to order
Reference Price (USD)
3,000+
$0.18669
6,000+
$0.17591
15,000+
$0.16513
30,000+
$0.15758
Exquisite packaging
Discount
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Experience the power of DMN1019UFDE-7, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, DMN1019UFDE-7 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 690mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type E)
- Package / Case: 6-PowerUDFN
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