DMN10H099SK3-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 17A TO252
$0.68
Available to order
Reference Price (USD)
2,500+
$0.28002
5,000+
$0.26286
12,500+
$0.25428
25,000+
$0.24960
Exquisite packaging
Discount
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Optimize your electronic systems with DMN10H099SK3-13, a high-quality Transistors - FETs, MOSFETs - Single from Diodes Incorporated. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, DMN10H099SK3-13 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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