DMG1029SV-7
Diodes Incorporated

Diodes Incorporated
MOSFET N/P-CH 60V SOT563
$0.44
Available to order
Reference Price (USD)
3,000+
$0.13098
6,000+
$0.12383
15,000+
$0.11668
30,000+
$0.10810
75,000+
$0.10452
Exquisite packaging
Discount
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The DMG1029SV-7 from Diodes Incorporated is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, DMG1029SV-7 offers the reliability you need. Contact us now to discuss how we can support your project requirements with Diodes Incorporated s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 500mA, 360mA
- Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
- Power - Max: 450mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563