DMN1150UFL3-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CHA 12V 2A DFN1310
$0.09
Available to order
Reference Price (USD)
3,000+
$0.09816
6,000+
$0.08916
15,000+
$0.08016
30,000+
$0.07567
75,000+
$0.06802
150,000+
$0.06577
Exquisite packaging
Discount
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The DMN1150UFL3-7 from Diodes Incorporated is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, DMN1150UFL3-7 offers the reliability you need. Contact us now to discuss how we can support your project requirements with Diodes Incorporated s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 2A
- Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V
- Power - Max: 390mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: X2-DFN1310-6 (Type B)
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