DMN2990UDJ-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 0.45A SOT-963
$0.46
Available to order
Reference Price (USD)
10,000+
$0.12350
30,000+
$0.11441
50,000+
$0.11063
100,000+
$0.11008
Exquisite packaging
Discount
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Optimize your electronic circuits with Diodes Incorporated s DMN2990UDJ-7, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how DMN2990UDJ-7 can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 450mA
- Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
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Diodes Incorporated