DMN2004K-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 630MA SOT23-3
$0.41
Available to order
Reference Price (USD)
3,000+
$0.09600
6,000+
$0.08720
15,000+
$0.07840
30,000+
$0.07400
75,000+
$0.06652
150,000+
$0.06432
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with DMN2004K-7, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust DMN2004K-7 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Microchip Technology
APT10M09LVFRG
Rohm Semiconductor
R6030KNX
Renesas Electronics America Inc
2SK1582-T1B-A
Alpha & Omega Semiconductor Inc.
AOTF15S65L
Infineon Technologies
IPP019N08NF2SAKMA1
Vishay Siliconix
SIHW47N60E-GE3
NXP USA Inc.
PMZB300XN,315
Infineon Technologies
AUIRF4104S
Microchip Technology
APT4014BVFRG
onsemi