IPP019N08NF2SAKMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V
$3.34
Available to order
Reference Price (USD)
1+
$3.34000
500+
$3.3066
1000+
$3.2732
1500+
$3.2398
2000+
$3.2064
2500+
$3.173
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IPP019N08NF2SAKMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IPP019N08NF2SAKMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 191A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 194µA
- Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
SIHW47N60E-GE3
NXP USA Inc.
PMZB300XN,315
Infineon Technologies
AUIRF4104S
Microchip Technology
APT4014BVFRG
onsemi
NTBG015N065SC1
Motorola
NTB6N60T4
Alpha & Omega Semiconductor Inc.
AOT262L
Panjit International Inc.
PJD55N03_L2_00001
Fairchild Semiconductor
SSS2N60B
Diodes Incorporated