DMN2005K-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 300MA SOT23-3
$0.42
Available to order
Reference Price (USD)
3,000+
$0.18669
6,000+
$0.17591
15,000+
$0.16513
30,000+
$0.15758
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMN2005K-7 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMN2005K-7 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.7V
- Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 2.7V
- Vgs(th) (Max) @ Id: 900mV @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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