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SQJ469EP-T1_GE3

Vishay Siliconix
SQJ469EP-T1_GE3 Preview
Vishay Siliconix
MOSFET P-CH 80V 32A PPAK SO-8
$3.05
Available to order
Reference Price (USD)
3,000+
$1.50575
6,000+
$1.45350
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 40 V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8

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