DMN2005LPK-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 440MA 3DFN
$0.51
Available to order
Reference Price (USD)
3,000+
$0.11990
6,000+
$0.11385
15,000+
$0.10478
30,000+
$0.09873
75,000+
$0.08965
Exquisite packaging
Discount
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Boost your electronic applications with DMN2005LPK-7, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMN2005LPK-7 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.2V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 450mW (Ta)
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X1-DFN1006-3
- Package / Case: 3-UFDFN
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