DMN2008LFU-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2NCH 20V 14.5A UDFN2030
$0.26
Available to order
Reference Price (USD)
1+
$0.26190
500+
$0.259281
1000+
$0.256662
1500+
$0.254043
2000+
$0.251424
2500+
$0.248805
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance DMN2008LFU-13 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Diodes Incorporated s DMN2008LFU-13 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 14.5A
- Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: U-DFN2030-6 (Type B)
Related Products
Rohm Semiconductor
QS8J11TCR
Vishay Siliconix
SQJB48EP-T1_GE3
Fairchild Semiconductor
FDB3652SB82059
Microchip Technology
TC6320K6-G
onsemi
ECH8653-S-TL-H
Toshiba Semiconductor and Storage
SSM6N357R,LF
Nexperia USA Inc.
PMGD280UN,115
Diodes Incorporated
DMP2004VK-7
Vishay Siliconix
SI4963BDY-T1-E3
onsemi