DMN2011UFX-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 12.2A DFN2050-4
$0.90
Available to order
Reference Price (USD)
3,000+
$0.37480
6,000+
$0.35183
15,000+
$0.34034
30,000+
$0.33408
Exquisite packaging
Discount
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Enhance your electronic applications with Diodes Incorporated s DMN2011UFX-7, a leading product in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are known for their high-speed performance, low energy consumption, and robust design. Perfect for use in switching regulators, audio systems, and communication devices. Discover the benefits of DMN2011UFX-7 today get in touch with us for a detailed quote and technical support.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
- Power - Max: 2.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-VFDFN Exposed Pad
- Supplier Device Package: V-DFN2050-4
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