DMN2020UFCL-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 9A X1-DFN1616-6
$0.44
Available to order
Reference Price (USD)
3,000+
$0.17389
6,000+
$0.16440
15,000+
$0.15491
30,000+
$0.14352
75,000+
$0.13877
Exquisite packaging
Discount
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Boost your electronic applications with DMN2020UFCL-7, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMN2020UFCL-7 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 610mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X1-DFN1616-6 (Type E)
- Package / Case: 6-PowerUFDFN
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