DMN2028UFU-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 7.9A UDFN2020-6
$0.14
Available to order
Reference Price (USD)
1+
$0.13908
500+
$0.1376892
1000+
$0.1362984
1500+
$0.1349076
2000+
$0.1335168
2500+
$0.132126
Exquisite packaging
Discount
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The DMN2028UFU-13 from Diodes Incorporated is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, DMN2028UFU-13 delivers consistent quality. Contact us now to learn more and secure your supply of Diodes Incorporated s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.5A
- Rds On (Max) @ Id, Vgs: 20.2mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: U-DFN2030-6 (Type B)
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