DMN2990UFB-7B
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 780MA 3DFN
$0.05
Available to order
Reference Price (USD)
10,000+
$0.05341
Exquisite packaging
Discount
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Discover high-performance DMN2990UFB-7B from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, DMN2990UFB-7B delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250A
- Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 520mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X1-DFN1006-3
- Package / Case: 3-UFDFN
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