DMN3016LDN-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2 N-CH 9.2A VDFN3030-8
$0.19
Available to order
Reference Price (USD)
10,000+
$0.20220
Exquisite packaging
Discount
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Discover high-performance DMN3016LDN-13 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Diodes Incorporated s DMN3016LDN-13 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
- Power - Max: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: V-DFN3030-8 (Type J)
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