DMN3035LWN-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 30V 5.5A 8VDFN
$0.54
Available to order
Reference Price (USD)
1+
$0.54000
500+
$0.5346
1000+
$0.5292
1500+
$0.5238
2000+
$0.5184
2500+
$0.513
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN3035LWN-7 by Diodes Incorporated is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Diodes Incorporated s DMN3035LWN-7 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.5A
- Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V
- Power - Max: 770mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: V-DFN3020-8 (Type N)
Related Products
Vishay Siliconix
SQJ500AEP-T1_BE3
Vishay Siliconix
SIZ320DT-T1-GE3
Infineon Technologies
BSC0923NDIATMA1
onsemi
FDC6327C
Wolfspeed, Inc.
CAB760M12HM3
Renesas Electronics America Inc
FS70UMJ-06F-REN
onsemi
FDG6304P
Diodes Incorporated
DMN5L06DWK-7-01
Diodes Incorporated
DMP3056LSD-13
Diodes Incorporated