DMN30H4D0L-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 300V 250MA SOT23
$0.59
Available to order
Reference Price (USD)
3,000+
$0.22384
6,000+
$0.21091
15,000+
$0.19799
30,000+
$0.18894
Exquisite packaging
Discount
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Enhance your circuit performance with DMN30H4D0L-7, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust DMN30H4D0L-7 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
- Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 310mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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