DMN3190LDWQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT363 T&R
$0.10
Available to order
Reference Price (USD)
1+
$0.09856
500+
$0.0975744
1000+
$0.0965888
1500+
$0.0956032
2000+
$0.0946176
2500+
$0.093632
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your project s performance with Diodes Incorporated s DMN3190LDWQ-7, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, DMN3190LDWQ-7 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of DMN3190LDWQ-7.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
- Power - Max: 320mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
Related Products
Vishay Siliconix
SQJ570EP-T1_BE3
Diodes Incorporated
DMC2450UV-13
Fairchild Semiconductor
FDW2509NZ
Rohm Semiconductor
UT6MA3TCR
Diodes Incorporated
DMC67D8UFDBQ-13
Infineon Technologies
FF3MR12KM1PHOSA1
Nexperia USA Inc.
PMDXB600UNELZ
Harris Corporation
RFP30N6LER4541
onsemi
FDC6312P
Wolfspeed, Inc.