DMN3730UFB4-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 750MA 3DFN
$0.51
Available to order
Reference Price (USD)
3,000+
$0.19050
6,000+
$0.17950
15,000+
$0.16850
30,000+
$0.16080
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with DMN3730UFB4-7, a high-quality Transistors - FETs, MOSFETs - Single from Diodes Incorporated. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, DMN3730UFB4-7 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 64.3 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 470mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN1006-3
- Package / Case: 3-XFDFN
Related Products
Vishay Siliconix
SI2305CDS-T1-GE3
Rectron USA
RM80N150T2
Infineon Technologies
IRF8736TRPBF
Vishay Siliconix
IRF644PBF-BE3
Infineon Technologies
SPA08N80C3XKSA1
Vishay Siliconix
SI2367DS-T1-BE3
Vishay Siliconix
SIHG70N60AEF-GE3
Diodes Incorporated
DMN60H080DS-13
Diotec Semiconductor
2N7002W
Micro Commercial Co