DMN3731U-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 900MA SOT23
$0.04
Available to order
Reference Price (USD)
1+
$0.03534
500+
$0.0349866
1000+
$0.0346332
1500+
$0.0342798
2000+
$0.0339264
2500+
$0.033573
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMN3731U-13 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMN3731U-13 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 0.95V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 400mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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