NTE2386
NTE Electronics, Inc
NTE Electronics, Inc
MOSFET N-CHANNEL 600V 6.2A TO3
$87.51
Available to order
Reference Price (USD)
1+
$87.51000
500+
$86.6349
1000+
$85.7598
1500+
$84.8847
2000+
$84.0096
2500+
$83.1345
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
NTE2386 by NTE Electronics, Inc is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, NTE2386 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3
- Package / Case: TO-204AA, TO-3
Related Products
onsemi
FDS8690
Infineon Technologies
IPA50R190CEXKSA2
Rohm Semiconductor
RSQ015N06TR
onsemi
MMFT1N10ET3
onsemi
NVTYS003N03CLTWG
Infineon Technologies
IPB80N04S306ATMA1
Fairchild Semiconductor
HUFA75321D3
Infineon Technologies
IPD068P03L3GATMA1
Nexperia USA Inc.
BUK764R0-55B,118
Toshiba Semiconductor and Storage