SI1021R-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 60V 190MA SC75A
$0.58
Available to order
Reference Price (USD)
3,000+
$0.18050
6,000+
$0.16950
15,000+
$0.15850
30,000+
$0.15080
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
SI1021R-T1-GE3 by Vishay Siliconix is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, SI1021R-T1-GE3 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-75A
- Package / Case: SC-75, SOT-416
Related Products
Vishay Siliconix
SIHP15N60E-GE3
onsemi
NDD60N360U1T4G
Infineon Technologies
IRL3705ZPBF
onsemi
FDB7030BL-ON
Toshiba Semiconductor and Storage
TK2A65D(STA4,Q,M)
Rohm Semiconductor
RRR030P03HZGTL
STMicroelectronics
STL7N80K5
IXYS
IXTT82N25P
Infineon Technologies
IRF5802TRPBF
onsemi