DMN53D0LDW-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 50V 0.36A SOT363
$0.36
Available to order
Reference Price (USD)
1+
$0.36000
500+
$0.3564
1000+
$0.3528
1500+
$0.3492
2000+
$0.3456
2500+
$0.342
Exquisite packaging
Discount
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Enhance your electronic applications with Diodes Incorporated s DMN53D0LDW-13, a leading product in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are known for their high-speed performance, low energy consumption, and robust design. Perfect for use in switching regulators, audio systems, and communication devices. Discover the benefits of DMN53D0LDW-13 today get in touch with us for a detailed quote and technical support.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 360mA
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
- Power - Max: 310mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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