DMN53D0LDWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V SOT363 T&R
$0.10
Available to order
Reference Price (USD)
1+
$0.10196
500+
$0.1009404
1000+
$0.0999208
1500+
$0.0989012
2000+
$0.0978816
2500+
$0.096862
Exquisite packaging
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Optimize your electronic circuits with Diodes Incorporated s DMN53D0LDWQ-13, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how DMN53D0LDWQ-13 can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 49.5pF @ 25V
- Power - Max: 400mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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