DMN6075S-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 2A SOT23
$0.45
Available to order
Reference Price (USD)
1+
$0.45000
500+
$0.4455
1000+
$0.441
1500+
$0.4365
2000+
$0.432
2500+
$0.4275
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with DMN6075S-13, a high-quality Transistors - FETs, MOSFETs - Single from Diodes Incorporated. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, DMN6075S-13 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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