IPA60R380E6XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 10.6A TO220-FP
$2.83
Available to order
Reference Price (USD)
500+
$1.32652
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IPA60R380E6XKSA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPA60R380E6XKSA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 31W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
Related Products
NXP USA Inc.
PMG85XP,115
Microchip Technology
APT34F100B2
Fairchild Semiconductor
FQAF44N10
Infineon Technologies
IPP60R600P7XKSA1
onsemi
NTR3C21NZT1G
Fairchild Semiconductor
FDI9406-F085
Fairchild Semiconductor
FDS3670
Vishay Siliconix
IRFZ24SPBF
Infineon Technologies
IPP070N08N3G
Infineon Technologies