DMN62D0UW-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 340MA SOT323
$0.05
Available to order
Reference Price (USD)
1+
$0.04525
500+
$0.0447975
1000+
$0.044345
1500+
$0.0438925
2000+
$0.04344
2500+
$0.0429875
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover DMN62D0UW-13, a versatile Transistors - FETs, MOSFETs - Single solution from Diodes Incorporated, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 320mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
Related Products
STMicroelectronics
STP38N65M5
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL2101W-F2-0000HF
onsemi
NTTFS4943NTAG
Fairchild Semiconductor
FDU068AN03L
Rohm Semiconductor
R6011KNJTL
IXYS
IXFH130N15X3
IXYS
IXFP90N20X3M
Infineon Technologies
IPW65R060CFD7XKSA1
Fairchild Semiconductor
ISL9N310AD3ST
Vishay Siliconix