DMN62D1LFD-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 400MA 3DFN
$0.47
Available to order
Reference Price (USD)
10,000+
$0.07409
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with DMN62D1LFD-13, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMN62D1LFD-13 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X1-DFN1212-3
- Package / Case: 3-UDFN
Related Products
Panjit International Inc.
PJP6NA40_T0_00001
Rohm Semiconductor
RE1J002YNTCL
onsemi
BFL4001
Fairchild Semiconductor
FQP4N25
Diotec Semiconductor
MMFTP3401-AQ
Vishay Siliconix
SQJ868EP-T1_BE3
Infineon Technologies
IRFR9120NTRPBF
EPC
EPC2065
Renesas Electronics America Inc
RJK5033DPD-00#J2
onsemi