DMN63D8L-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 350MA SOT23-3
$0.03
Available to order
Reference Price (USD)
1+
$0.03347
500+
$0.0331353
1000+
$0.0328006
1500+
$0.0324659
2000+
$0.0321312
2500+
$0.0317965
Exquisite packaging
Discount
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Upgrade your electronic designs with DMN63D8L-13 by Diodes Incorporated, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, DMN63D8L-13 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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