STO67N60DM6
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 33A TOLL
$8.34
Available to order
Reference Price (USD)
1+
$8.34000
500+
$8.2566
1000+
$8.1732
1500+
$8.0898
2000+
$8.0064
2500+
$7.923
Exquisite packaging
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Discover STO67N60DM6, a versatile Transistors - FETs, MOSFETs - Single solution from STMicroelectronics, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 59mOhm @ 23.75A, 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL (HV)
- Package / Case: 8-PowerSFN
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