DMN67D7L-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 210MA SOT23-3
$0.04
Available to order
Reference Price (USD)
10,000+
$0.03850
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance DMN67D7L-13 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, DMN67D7L-13 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V
- Vgs (Max): ±40V
- Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 570mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
onsemi
FCP290N80
IXYS
IXFK120N25P
Infineon Technologies
AUIRFR120ZTRL
Microchip Technology
APT20M20B2FLLG
Renesas Electronics America Inc
UPA2701GR-E1-AT
STMicroelectronics
STW21N90K5
Infineon Technologies
IPT210N25NFDATMA1
Infineon Technologies
IPW50R299CP
onsemi
NVTR4503NT1G
Central Semiconductor Corp