UPA2701GR-E1-AT
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 30V 14A 8PSOP
$1.59
Available to order
Reference Price (USD)
1+
$1.59000
500+
$1.5741
1000+
$1.5582
1500+
$1.5423
2000+
$1.5264
2500+
$1.5105
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose UPA2701GR-E1-AT by Renesas Electronics America Inc. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with UPA2701GR-E1-AT inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PSOP
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
Related Products
STMicroelectronics
STW21N90K5
Infineon Technologies
IPT210N25NFDATMA1
Infineon Technologies
IPW50R299CP
onsemi
NVTR4503NT1G
Central Semiconductor Corp
CWDM305P TR13 PBFREE
STMicroelectronics
STP80NF55-08
Toshiba Semiconductor and Storage
TKR74F04PB,LXGQ
Nexperia USA Inc.
PSMN039-100YS,115
Nexperia USA Inc.
PSMN011-60MSX
Rohm Semiconductor