DMP1011UCB9-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 8V 10A U-WLB1515-9
$0.91
Available to order
Reference Price (USD)
3,000+
$0.37695
6,000+
$0.35385
15,000+
$0.34230
30,000+
$0.33600
Exquisite packaging
Discount
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Discover DMP1011UCB9-7, a versatile Transistors - FETs, MOSFETs - Single solution from Diodes Incorporated, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
- Vgs (Max): -6V
- Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
- FET Feature: -
- Power Dissipation (Max): 890mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-WLB1515-9
- Package / Case: 9-UFBGA, WLBGA
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