DMP1081UCB4-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 12V 3A U-WLB1010-4
$0.71
Available to order
Reference Price (USD)
3,000+
$0.28917
6,000+
$0.26923
15,000+
$0.25926
30,000+
$0.25382
Exquisite packaging
Discount
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Experience the power of DMP1081UCB4-7, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, DMP1081UCB4-7 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
- Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 0.9V
- Vgs(th) (Max) @ Id: 650mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
- Vgs (Max): -6V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 820mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-WLB1010-4
- Package / Case: 4-UFBGA, WLBGA
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