DMP2069UFY4-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 20V 2.5A DFN2015H4-3
$0.51
Available to order
Reference Price (USD)
3,000+
$0.19050
6,000+
$0.17950
15,000+
$0.16850
30,000+
$0.16080
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with DMP2069UFY4-7, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust DMP2069UFY4-7 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 530mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2015H4-3
- Package / Case: 3-XFDFN
Related Products
Infineon Technologies
IPP50R500CEXKSA1
Diodes Incorporated
DMP2070U-7
Texas Instruments
CSD19537Q3T
Diodes Incorporated
ZXMN10A11GTA
Diodes Incorporated
DMP4011SK3-13
Nexperia USA Inc.
PSMN4R5-40PS,127
Taiwan Semiconductor Corporation
TSM018NB03CR RLG
Toshiba Semiconductor and Storage
TK170V65Z,LQ
Panjit International Inc.
PJS6415AE_S1_00001
Nexperia USA Inc.