DMP21D0UFB-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 20V 770MA 3DFN
$0.11
Available to order
Reference Price (USD)
3,000+
$0.12818
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMP21D0UFB-7 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMP21D0UFB-7 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 495mOhm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 76.5 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 430mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X1-DFN1006-3
- Package / Case: 3-UFDFN
Related Products
Infineon Technologies
IRFU7540PBF
STMicroelectronics
STL60P4LLF6
IXYS
IXFP34N65X3
onsemi
2N7000-D74Z
IXYS
IXFX170N20T
Micro Commercial Co
2N7002-TP
Nexperia USA Inc.
BUK9M11-40HX
Infineon Technologies
BSZ440N10NS3GATMA1
onsemi
NTS2101PT1G
Rectron USA