DMP610DLQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V SOT23 T&R
$0.06
Available to order
Reference Price (USD)
1+
$0.06047
500+
$0.0598653
1000+
$0.0592606
1500+
$0.0586559
2000+
$0.0580512
2500+
$0.0574465
Exquisite packaging
Discount
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Experience the power of DMP610DLQ-7, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, DMP610DLQ-7 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 186mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 5 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 520mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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