DMP6250SEQ-13
Diodes Incorporated

Diodes Incorporated
MOSFET BVDSS: 41V~60V SOT223 T&R
$0.16
Available to order
Reference Price (USD)
1+
$0.16008
500+
$0.1584792
1000+
$0.1568784
1500+
$0.1552776
2000+
$0.1536768
2500+
$0.152076
Exquisite packaging
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Discover high-performance DMP6250SEQ-13 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, DMP6250SEQ-13 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 14W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-3
- Package / Case: TO-261-4, TO-261AA