IXFT120N30X3HV
IXYS
IXYS
MOSFET N-CH 300V 120A TO268HV
$18.10
Available to order
Reference Price (USD)
1+
$12.39000
30+
$10.41567
120+
$9.57100
510+
$8.16351
1,020+
$7.88200
Exquisite packaging
Discount
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IXYS presents IXFT120N30X3HV, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IXFT120N30X3HV delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1376 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 735W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268HV (IXFT)
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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