DMP65H13D0HSS-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 501V~650V SO-8 T&R
$0.51
Available to order
Reference Price (USD)
1+
$0.51251
500+
$0.5073849
1000+
$0.5022598
1500+
$0.4971347
2000+
$0.4920096
2500+
$0.4868845
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMP65H13D0HSS-13 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMP65H13D0HSS-13 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 13Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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