DMS2120LFWB-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 20V 2.9A 8DFN
$0.19
Available to order
Reference Price (USD)
3,000+
$0.16275
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of DMS2120LFWB-7, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, DMS2120LFWB-7 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN3020B (3x2)
- Package / Case: 8-VDFN Exposed Pad
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