DMT10H017LPD-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V-100V POWERDI50
$0.76
Available to order
Reference Price (USD)
2,500+
$0.82128
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMT10H017LPD-13 by Diodes Incorporated is a standout in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Engineered for excellence, these components offer unmatched reliability and performance. Features such as high voltage tolerance, low gate charge, and superior thermal management make them a preferred choice. Applications range from industrial automation to consumer electronics. Don t miss out on the opportunity to integrate DMT10H017LPD-13 into your systems contact us for more details and pricing.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 54.7A (Tc)
- Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
- Power - Max: 2.2W (Ta), 78W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8
Related Products
Nexperia USA Inc.
PMDPB56XNEAX
Vishay Siliconix
SI7998DP-T1-GE3
Vishay Siliconix
SI5504BDC-T1-E3
onsemi
MCH6605-TL-E
onsemi
NTLUD4C26NTAG
Infineon Technologies
2N7002DWH6327XTSA1
Toshiba Semiconductor and Storage
SSM6L36FE,LM
Infineon Technologies
DF11MR12W1M1PB11BPSA1
Rohm Semiconductor
US6M2TR
Rohm Semiconductor