DMT10H072LFV-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V PWRDI3333
$0.24
Available to order
Reference Price (USD)
1+
$0.24388
500+
$0.2414412
1000+
$0.2390024
1500+
$0.2365636
2000+
$0.2341248
2500+
$0.231686
Exquisite packaging
Discount
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Discover high-performance DMT10H072LFV-13 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, DMT10H072LFV-13 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8 (Type UX)
- Package / Case: 8-PowerVDFN
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