DMT6011LSS-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V SO-8 T&R 2
$0.23
Available to order
Reference Price (USD)
1+
$0.23307
500+
$0.2307393
1000+
$0.2284086
1500+
$0.2260779
2000+
$0.2237472
2500+
$0.2214165
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with DMT6011LSS-13 by Diodes Incorporated, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, DMT6011LSS-13 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1072 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
onsemi
2SK2628LS
Vishay Siliconix
SI7716ADN-T1-GE3
Renesas Electronics America Inc
BB504MDS-TL-E
PN Junction Semiconductor
P3M171K2K3
Texas Instruments
CSD17303Q5
Nexperia USA Inc.
PHP79NQ08LT,127
onsemi
FDB86566-F085
onsemi
FQP3N80C
onsemi
NTMD4884NFR2G
Vishay Siliconix