DMT6017LFV-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 65V 36A POWERDI3333
$0.24
Available to order
Reference Price (USD)
2,000+
$0.25108
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with DMT6017LFV-7, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust DMT6017LFV-7 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 65 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.12W (Ta), 39.06W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8 (Type UX)
- Package / Case: 8-PowerVDFN
Related Products
Infineon Technologies
IRF540ZPBF
Infineon Technologies
IPS70R1K4P7SAKMA1
Vishay Siliconix
IRF9510PBF-BE3
Diodes Incorporated
DMT8008SK3-13
Infineon Technologies
IRF6637TRPBF
Infineon Technologies
BSC096N10LS5ATMA1
Panjit International Inc.
PJA3404_R1_00001
Nexperia USA Inc.
PMV13XNEAR
Diodes Incorporated
DMP3026SFDF-7
onsemi