DMT67M8LK3-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V TO252 T&R
$0.39
Available to order
Reference Price (USD)
1+
$0.39460
500+
$0.390654
1000+
$0.386708
1500+
$0.382762
2000+
$0.378816
2500+
$0.37487
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Diodes Incorporated presents DMT67M8LK3-13, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, DMT67M8LK3-13 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 89.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
IXYS
IXTA36P15P
Rectron USA
RM50N60T2
GeneSiC Semiconductor
G3R160MT17D
Panjit International Inc.
PJL9436A1_R2_00001
Nexperia USA Inc.
BUK768R1-100E,118
Nexperia USA Inc.
PSMN1R5-30YLC,115
Vishay Siliconix
SQ4153EY-T1_BE3
onsemi
CPH3314-TL-H
Toshiba Semiconductor and Storage
TK155A65Z,S4X
IXYS