DMTH4008LFDFWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 40V 11.6A 6UDFN
$0.67
Available to order
Reference Price (USD)
10,000+
$0.25118
30,000+
$0.24656
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with DMTH4008LFDFWQ-13, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMTH4008LFDFWQ-13 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 990mW (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
- Package / Case: 6-UDFN Exposed Pad
Related Products
Taiwan Semiconductor Corporation
TSM085N03PQ33 RGG
Nexperia USA Inc.
PH2520U,115
Infineon Technologies
IRFH5110TRPBF
Microchip Technology
TP0606N3-G-P002
onsemi
NTTFS004N04CTAG
STMicroelectronics
STB100NF04T4
IXYS
IXFY30N25X3
onsemi
NTNS3190NZT5G
onsemi
FDD86581-F085
NXP USA Inc.