DMTH4014LPSW-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 31V~40V POWERDI506
$0.24
Available to order
Reference Price (USD)
1+
$0.24074
500+
$0.2383326
1000+
$0.2359252
1500+
$0.2335178
2000+
$0.2311104
2500+
$0.228703
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of DMTH4014LPSW-13, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, DMTH4014LPSW-13 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 4W (Ta), 46.9W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI5060-8 (Type UX)
- Package / Case: 8-PowerTDFN
Related Products
onsemi
NTMFS4847NT1G
Panjit International Inc.
PJC138K_R1_00001
Vishay Siliconix
SI2302CDS-T1-BE3
NXP Semiconductors
PSMN8R7-80PS,127
Infineon Technologies
SPA02N80C3XKSA1
STMicroelectronics
STW7N90K5
Micro Commercial Co
SI3139KE-TP
Infineon Technologies
IPP60R385CP
Diodes Incorporated
ZVP2110GTA
UnitedSiC