EMD12T2R
Rohm Semiconductor
Rohm Semiconductor
TRANS NPN/PNP PREBIAS 0.15W EMT6
$0.41
Available to order
Reference Price (USD)
8,000+
$0.09690
16,000+
$0.08835
24,000+
$0.08265
56,000+
$0.07980
Exquisite packaging
Discount
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Enhance your circuit designs with Rohm Semiconductor's EMD12T2R Pre-Biased BJT Arrays the perfect solution for space-constrained applications. These discrete semiconductor products deliver optimized performance with built-in bias resistors, simplifying your PCB layout while ensuring stable operation. Key features include high current gain, low leakage current, and excellent temperature characteristics. Widely used in LED drivers, interface circuits, and logic level conversion across telecom, automation, and IoT devices. Trust Rohm Semiconductor's expertise in transistor technology for your next project. Ready to order or need technical support? Send us your inquiry today!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
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